Samsung Semiconductor, Inc. TIP141T | 搜芯易Sourcengine

Samsung Semiconductor, Inc. TIP141T

生命周期状态
Transferred
说明
Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin
类别
Semiconductors Transistors Power Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PSFM-T3
Configuration
DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
DLA Qualification
Not Qualified
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
NPN
DC Current Gain-Min (hFE)
500
Power Dissipation-Max (W)
80
Transistor Element Material
SILICON
Collector Current-Max (IC) (A)
10
Operating Temperature-Max (Cel)
150
Collector-emitter Voltage-Max (V)
80