Toshiba Corporation TIM6472-45SL | 搜芯易Sourcengine

Toshiba Corporation TIM6472-45SL

生命周期状态
Contact Mfr
RoHS
符合RoHS标准
REACH
REACH compliant
说明
RF JFET Transistors transistor,gaas fet internally matched, 6ghz, 125w
类别
Semiconductors Transistors RF Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.75
SB Code
8541.29.00.80

Application
AMPLIFIER
JESD-30 Code
R-CDFM-F2
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
YES
Terminal Form
FLAT
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
DEPLETION MODE
Case Connection
SOURCE
DLA Qualification
Not Qualified
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
2
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Polarity/Channel Type
N-CHANNEL
Highest Frequency Band
C BAND
Drain Current-Max (ID) (A)
20
Transistor Element Material
GALLIUM ARSENIDE
DS Breakdown Voltage-Min (V)
15
Peak Reflow Temperature (Cel)
260
Operating Temperature-Max (Cel)
175
Power Dissipation Ambient-Max (W)
125
Time@Peak Reflow Temperature-Max (s)
30