KODENSHI AUK CORP THN6501FAB2 | 搜芯易Sourcengine

KODENSHI AUK CORP THN6501FAB2

生命周期状态
Contact Mfr
说明
RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silicon Germanium, NPN
类别
Semiconductors Transistors RF Small Signal Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
AMPLIFIER
JESD-30 Code
R-PSSO-F3
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
FLAT
Case Connection
COLLECTOR
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
NPN
Highest Frequency Band
ULTRA HIGH FREQUENCY BAND
DC Current Gain-Min (hFE)
80
Power Dissipation-Max (W)
0.4
Transistor Element Material
SILICON GERMANIUM
Collector Current-Max (IC) (A)
0.1
Operating Temperature-Max (Cel)
150
Collector-emitter Voltage-Max (V)
12
Power Dissipation Ambient-Max (W)
0.4
Collector-base Capacitance-Max (pF)
1.02
Transition Frequency-Nom (fT) (MHz)
6700