KODENSHI AUK CORP THN6201UAC1 | 搜芯易Sourcengine

KODENSHI AUK CORP THN6201UAC1

生命周期状态
Contact Mfr
说明
RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, L Band, Silicon Germanium, NPN
类别
Semiconductors Transistors RF Small Signal Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PDSO-G3
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
Terminal Position
DUAL
Additional Feature
LOW NOISE
Number of Elements
1
Number of Terminals
3
Power Gain-Min (Gp)
6 dB
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
NPN
Highest Frequency Band
L BAND
Transistor Application
AMPLIFIER
DC Current Gain-Min (hFE)
125
Operating Temperature-Max
150 Cel
Collector Current-Max (IC)
0.035 A
Power Dissipation-Max (Abs)
0.15 W
Transistor Element Material
SILICON GERMANIUM
Collector-emitter Voltage-Max
12 V
Transition Frequency-Nom (fT)
12000 MHz
Collector-base Capacitance-Max
0.47 pF