THMY721630BEG-80
Toshiba Corporation
- 生命周期状态Discontinued
- 说明Synchronous DRAM Module, 16MX4, 6.5ns, CMOS
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.02
- SB Code8542.32.00.15
- Width4 mm
- Length133.35 mm
- I/O TypeCOMMON
- TechnologyCMOS
- Access ModeSINGLE BANK PAGE BURST
- JESD-30 CodeR-XDMA-N168
- Memory Width4
- Organization16MX4
- Package CodeDIMM
- Self RefreshYES
- Package ShapeRECTANGULAR
- Package StyleMICROELECTRONIC ASSEMBLY Meter
- Surface MountNO
- Terminal FormNO LEAD
- Memory Density67108864 bit
- Memory IC TypeSYNCHRONOUS DRAM MODULE
- Operating ModeSYNCHRONOUS
- Refresh Cycles4096
- Terminal Pitch1.27 mm
- Access Time-Max6.5 ns
- Number of Ports1
- Number of Words16777216 words
- Seated Height-Max43.374 mm
- Temperature GradeCOMMERCIAL
- Terminal PositionDUAL
- Additional FeatureAUTO/SELF REFRESH; WD-MAX
- Number of Functions1
- Number of Terminals168
- Number of Words Code16M
- Qualification StatusNot Qualified
- Package Body MaterialUNSPECIFIED
- Output Characteristics3-STATE
- Package Equivalence CodeDIMM168
- Operating Temperature-Max70 Cel
- Operating Temperature-Min0 Cel
- Supply Voltage-Max (Vsup)3.45 V
- Supply Voltage-Min (Vsup)3.15 V
- Supply Voltage-Nom (Vsup)3.3 V
- Clock Frequency-Max (fCLK)125 MHz
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THMY721630BEG-80