Toshiba Corporation THM181000ASG-60 | 搜芯易Sourcengine

Toshiba Corporation THM181000ASG-60

生命周期状态
Discontinued
说明
Fast Page DRAM, 1MX18, 60ns, CMOS
类别
Semiconductors Memory ICs DRAMs FAST PAGE DRAM

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.02
SB Code
8542.32.00.15

Technology
CMOS
Memory Width
18
Memory IC Type
FAST PAGE DRAM
Operating Mode
ASYNCHRONOUS
Number of Ports
1
DLA Qualification
Not Qualified
Memory Organization
1MX18
Number of Functions
1
Access Time-Max (ns)
60
Number of Words Code
1M
Memory Density (bits)
18874368
Number of Words (words)
1048576