Toshiba Corporation THGBM7G9T8JBAIG | 搜芯易Sourcengine

Toshiba Corporation THGBM7G9T8JBAIG

生命周期状态
Transferred
说明
Flash Card, 64GX8
类别
Semiconductors Memory ICs Flash Memories FLASH CARD

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.51
SB Code
8542.32.00.50

Type
NAND TYPE
Technology
CMOS
JESD-30 Code
R-PBGA-B153
Memory Width
8
Package Shape
RECTANGULAR
Surface Mount
YES
Terminal Form
BALL
Memory IC Type
FLASH CARD
Temperature Grade
OTHER
Terminal Position
BOTTOM
Memory Organization
64GX8
Number of Functions
1
Number of Terminals
153
Number of Words Code
64G
Memory Density (bits)
549755813888
Package Body Material
PLASTIC/EPOXY
Supply Voltage-Max (V)
3.6
Supply Voltage-Min (V)
2.7
Number of Words (words)
68719476736
Programming Voltage (V)
2.7
Operating Temperature-Max (Cel)
85
Operating Temperature-Min (Cel)
-25