THGBM1G6D4EBAI4
Toshiba Corporation
- 生命周期状态Discontinued
- RoHS符合RoHS标准
- 说明Flash, 4GX16, PBGA169
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.51
- SB Code8542.32.00.50
- TypeMLC NAND TYPE
- Width12 mm
- Length18 mm
- TechnologyCMOS
- JESD-30 CodeR-PBGA-B169
- Memory Width16
- Organization4GX16
- Package CodeLFBGA
- JESD-609 Codee1
- Package ShapeRECTANGULAR
- Package StyleGRID ARRAY, LOW PROFILE, FINE PITCH Meter
- Surface MountYES
- Terminal FormBALL
- Memory Density68719476736 bit
- Memory IC TypeFLASH
- Operating ModeSYNCHRONOUS
- Terminal Pitch0.5 mm
- Number of Words4294967296 words
- Parallel/SerialPARALLEL
- Terminal FinishTIN SILVER COPPER
- Seated Height-Max1.3 mm
- Temperature GradeOTHER
- Terminal PositionBOTTOM
- Number of Functions1
- Number of Terminals169
- Programming Voltage3.3 V
- Number of Words Code4G
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Operating Temperature-Max85 Cel
- Operating Temperature-Min-25 Cel
- Supply Voltage-Max (Vsup)3.6 V
- Supply Voltage-Min (Vsup)2.7 V
- Supply Voltage-Nom (Vsup)3.3 V
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THGBM1G6D4EBAI4