Toshiba Corporation TGI7785-120L | 搜芯易Sourcengine

Toshiba Corporation TGI7785-120L

生命周期状态
Discontinued
RoHS
符合RoHS标准
说明
GaN FETs transistor gan hemt internally matched, 8.5 ghz, 50w, pd 140w
类别
Semiconductors Transistors RF Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.75
SB Code
8541.29.00.80

Application
AMPLIFIER
JESD-30 Code
R-CDFM-F2
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
YES
Terminal Form
FLAT
FET Technology
HIGH ELECTRON MOBILITY
Operating Mode
DEPLETION MODE
Case Connection
SOURCE
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
2
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Polarity/Channel Type
N-CHANNEL
Highest Frequency Band
X BAND
Drain Current-Max (ID) (A)
18
Transistor Element Material
GALLIUM NITRIDE
DS Breakdown Voltage-Min (V)
50
Operating Temperature-Max (Cel)
175
Power Dissipation Ambient-Max (W)
280