Qorvo, Inc TGF3021-SM | 搜芯易Sourcengine

Qorvo, Inc TGF3021-SM

生命周期状态
Active
RoHS
符合RoHS标准
REACH
REACH compliant
说明
RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Nitride, N-Channel, High Electron Mobility FET
类别
Semiconductors Transistors RF Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
AMPLIFIER
JESD-30 Code
R-PQCC-N20
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
CHIP CARRIER Meter
Surface Mount
YES
Terminal Form
NO LEAD
FET Technology
HIGH ELECTRON MOBILITY
Operating Mode
DEPLETION MODE
Case Connection
SOURCE
Terminal Position
QUAD
Number of Elements
1
Number of Terminals
20
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Highest Frequency Band
S BAND
Drain Current-Max (ID) (A)
5.8
Moisture Sensitivity Level
3
Transistor Element Material
GALLIUM NITRIDE
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
30