Qorvo, Inc TGF2933 | 搜芯易Sourcengine

Qorvo, Inc TGF2933

生命周期状态
Active
RoHS
符合RoHS标准
REACH
REACH compliant
说明
RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Nitride, N-Channel, High Electron Mobility FET
类别
Semiconductors Transistors RF Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
AMPLIFIER
JESD-30 Code
R-XUUC-N2
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
UNCASED CHIP Meter
Surface Mount
YES
Terminal Form
NO LEAD
FET Technology
HIGH ELECTRON MOBILITY
Operating Mode
DEPLETION MODE
Terminal Position
UPPER
Number of Elements
1
Number of Terminals
2
Package Body Material
UNSPECIFIED
Polarity/Channel Type
N-CHANNEL
Highest Frequency Band
K BAND
Power Gain-Min (Gp) (dB)
15
Drain Current-Max (ID) (A)
2
Transistor Element Material
GALLIUM NITRIDE
Peak Reflow Temperature (Cel)
260
Operating Temperature-Max (Cel)
85
Operating Temperature-Min (Cel)
-40
Time@Peak Reflow Temperature-Max (s)
30