Qorvo, Inc TGF2929-FL | 搜芯易Sourcengine

Qorvo, Inc TGF2929-FL

生命周期状态
Active
RoHS
符合RoHS标准
REACH
REACH compliant
说明
GaN FETs DC-3.5GHz 100W 28V GaN
类别
Semiconductors Transistors RF Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.75
SB Code
8541.29.00.80

Application
AMPLIFIER
JESD-30 Code
R-CDFM-F2
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
YES
Terminal Form
FLAT
FET Technology
HIGH ELECTRON MOBILITY
Operating Mode
DEPLETION MODE
Case Connection
SOURCE
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
2
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Polarity/Channel Type
N-CHANNEL
Highest Frequency Band
S BAND
Drain Current-Max (ID) (A)
12
Transistor Element Material
GALLIUM NITRIDE
Peak Reflow Temperature (Cel)
260
Operating Temperature-Max (Cel)
85
Operating Temperature-Min (Cel)
-40
Power Dissipation Ambient-Max (W)
82
Time@Peak Reflow Temperature-Max (s)
30