Qorvo, Inc TGF2060 | 搜芯易Sourcengine

Qorvo, Inc TGF2060

生命周期状态
Discontinued
RoHS
符合RoHS标准
REACH
REACH compliant
说明
RF Small Signal Field-Effect Transistor, 1-Element, K Band, Silicon, P-Channel, High Electron Mobility FET
类别
Semiconductors Transistors RF Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-XUUC-N
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
UNCASED CHIP Meter
Surface Mount
YES
Terminal Form
NO LEAD
FET Technology
HIGH ELECTRON MOBILITY
Operating Mode
DEPLETION MODE
Terminal Position
UPPER
Additional Feature
HIGH RELIABILITY
Number of Elements
1
Package Body Material
UNSPECIFIED
Polarity/Channel Type
P-CHANNEL
Highest Frequency Band
K BAND
Transistor Application
AMPLIFIER
DS Breakdown Voltage-Min
8 V
Transistor Element Material
SILICON
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
30