Qorvo, Inc TGF2023-2-20 | 搜芯易Sourcengine

Qorvo, Inc TGF2023-2-20

生命周期状态
Active
RoHS
符合RoHS标准
REACH
REACH compliant
说明
RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Nitride, N-Channel, High Electron Mobility FET
类别
Semiconductors Transistors RF Power Field-Effect Transistors

ECCN
3A001.B.3.B.4
ECCN Governance
EAR

Application
AMPLIFIER
JESD-30 Code
R-XUUC-N17
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
UNCASED CHIP Meter
Surface Mount
YES
Terminal Form
NO LEAD
FET Technology
HIGH ELECTRON MOBILITY
Operating Mode
DEPLETION MODE
Terminal Position
UPPER
Number of Elements
1
Number of Terminals
17
Package Body Material
UNSPECIFIED
Polarity/Channel Type
N-CHANNEL
Highest Frequency Band
KU BAND
Drain Current-Max (ID) (A)
20
Transistor Element Material
GALLIUM NITRIDE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED