Qorvo, Inc TGF2021-08-SG | 搜芯易Sourcengine

Qorvo, Inc TGF2021-08-SG

生命周期状态
Discontinued
RoHS
符合RoHS标准
说明
RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, High Electron Mobility FET
类别
Semiconductors Transistors RF Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PDSO-G2
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
HIGH ELECTRON MOBILITY
Operating Mode
DEPLETION MODE
Case Connection
SOURCE
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
2
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Highest Frequency Band
S BAND
Transistor Application
AMPLIFIER
Transistor Element Material
SILICON
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
30