Toshiba Corporation TD62593AP | 搜芯易Sourcengine

Toshiba Corporation TD62593AP

生命周期状态
Discontinued
说明
Power Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 8-Element, NPN, Silicon, Plastic/Epoxy, 18 Pin
类别
Semiconductors Transistors Power Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PDIP-T18
Configuration
COMMON EMITTER, 8 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR
Package Shape
RECTANGULAR
Package Style
IN-LINE Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
Terminal Position
DUAL
Additional Feature
LOGIC LEVEL COMPATIBLE, BUILT IN BIAS RESISTOR RATIO 3.70
Number of Elements
8
Number of Terminals
18
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
NPN
Transistor Application
SWITCHING
DC Current Gain-Min (hFE)
50
Operating Temperature-Max
85 Cel
Collector Current-Max (IC)
0.15 A
Transistor Element Material
SILICON
Collector-emitter Voltage-Max
50 V
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED