Toshiba Corporation TD62002AF-TP1 | 搜芯易Sourcengine

Toshiba Corporation TD62002AF-TP1

生命周期状态
Active-Unconfirmed
说明
Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 7-Element, NPN, Silicon
类别
Semiconductors Transistors Small Signal Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.21.00.95
SB Code
8541.21.00.80

VCEsat-Max
1.6 V
JESD-30 Code
R-PDSO-G16
Configuration
7 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
JESD-609 Code
e0
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
Terminal Finish
TIN LEAD
Terminal Position
DUAL
Number of Elements
7
Number of Terminals
16
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
NPN
Transistor Application
SWITCHING
DC Current Gain-Min (hFE)
1000
Operating Temperature-Max
85 Cel
Collector Current-Max (IC)
0.5 A
Transistor Element Material
SILICON
Collector-emitter Voltage-Max
50 V
Power Dissipation Ambient-Max
0.69 W