TC59R0808HK
Toshiba Corporation
- 生命周期状态Discontinued
- 说明Rambus DRAM, 1MX8, CMOS, PDSO36
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.02
- SB Code8542.32.00.15
- Width11 mm
- Length25 mm
- TechnologyCMOS
- Access ModeBLOCK ORIENTED PROTOCOL
- JESD-30 CodeR-PDSO-G36
- Memory Width8
- Organization1MX8
- Package CodeLSSOP
- Self RefreshYES
- JESD-609 Codee0
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE, LOW PROFILE, SHRINK PITCH Meter
- Surface MountYES
- Terminal FormGULL WING
- Memory Density8388608 bit
- Memory IC TypeRAMBUS DRAM
- Operating ModeSYNCHRONOUS
- Terminal Pitch0.65 mm
- Number of Ports1
- Number of Words1048576 words
- Terminal FinishTIN LEAD
- Seated Height-Max1.7 mm
- Temperature GradeCOMMERCIAL
- Terminal PositionDUAL
- Additional FeatureSELF REFRESH
- Number of Functions1
- Number of Terminals36
- Number of Words Code1M
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Output Characteristics3-STATE
- Operating Temperature-Max70 Cel
- Operating Temperature-Min0 Cel
- Supply Voltage-Max (Vsup)3.6 V
- Supply Voltage-Min (Vsup)3 V
- Supply Voltage-Nom (Vsup)3.3 V
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