Toshiba Corporation TC59LM906AMB-45 | 搜芯易Sourcengine

Toshiba Corporation TC59LM906AMB-45

生命周期状态
Active
说明
DDR1 DRAM, 64MX8, 22ns, MOS, PBGA60
类别
Semiconductors Memory ICs DRAMs DDR1 DRAM

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.28
SB Code
8542.32.00.15

I/O Type
COMMON
Technology
MOS
Width (mm)
12.7
Access Mode
MULTI BANK PAGE BURST
Length (mm)
16.5
JESD-30 Code
R-PBGA-B60
Memory Width
8
Package Code
TBGA
Self Refresh
YES
Package Shape
RECTANGULAR
Package Style
GRID ARRAY, THIN PROFILE Meter
Surface Mount
YES
Terminal Form
BALL
J-STD-609 Code
e0
Memory IC Type
DDR1 DRAM
Operating Mode
SYNCHRONOUS
Number of Ports
1
Terminal Finish
TIN LEAD
DLA Qualification
Not Qualified
Temperature Grade
OTHER
Terminal Position
BOTTOM
Additional Feature
AUTO/SELF REFRESH
Memory Organization
64MX8
Number of Functions
1
Number of Terminals
60
Terminal Pitch (mm)
1
Access Time-Max (ns)
22
Number of Words Code
64M
Memory Density (bits)
536870912
Package Body Material
PLASTIC/EPOXY
Output Characteristics
3-STATE
Seated Height-Max (mm)
1.2
Supply Voltage-Max (V)
2.625
Supply Voltage-Min (V)
2.375
Supply Voltage-Nom (V)
2.5
Number of Words (words)
67108864
Sequential Burst Length
2,4
Interleaved Burst Length
2,4
Package Equivalence Code
BGA60,6X15,40
Clock Frequency-Max (MHz)
222
Operating Temperature-Max (Cel)
85
Operating Temperature-Min (Cel)
0