TC55YK1618AYB-666
Toshiba Corporation
- 生命周期状态Active
- 说明DDR SRAM, 1MX18, 0.2ns, CMOS, CBGA153
- 类别
- ECCN3A991.b.2.a
- ECCN GovernanceEAR
- HTS Code8542.32.00.41
- SB Code8542.32.00.40
- TechnologyCMOS
- Width (mm)14
- Length (mm)22
- JESD-30 CodeR-CBGA-B153
- Memory Width18
- Package CodeBGA
- Package ShapeRECTANGULAR
- Package StyleGRID ARRAY Meter
- Surface MountYES
- Terminal FormBALL
- J-STD-609 Codee0
- Memory IC TypeDDR SRAM
- Operating ModeSYNCHRONOUS
- Parallel/SerialPARALLEL
- Terminal FinishTIN LEAD
- DLA QualificationNot Qualified
- Temperature GradeCOMMERCIAL
- Terminal PositionBOTTOM
- Memory Organization1MX18
- Number of Functions1
- Number of Terminals153
- Terminal Pitch (mm)1.27
- Access Time-Max (ns)0.2
- Number of Words Code1M
- Memory Density (bits)18874368
- Package Body MaterialCERAMIC, METAL-SEALED COFIRED
- Seated Height-Max (mm)2.75
- Supply Voltage-Max (V)1.89
- Supply Voltage-Min (V)1.71
- Supply Voltage-Nom (V)1.8
- Number of Words (words)1048576
- Operating Temperature-Max (Cel)70
- Operating Temperature-Min (Cel)0
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