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TC51WKM716AXBN75

Toshiba Corporation

Toshiba Corporation TC51WKM716AXBN75
  • ECCN
    3A991.b.2.a
  • ECCN Governance
    EAR
  • HTS Code
    8542.32.00.41
  • SB Code
    8542.32.00.40
  • I/O Type
    COMMON
  • Technology
    CMOS
  • Width (mm)
    9
  • Length (mm)
    12
  • JESD-30 Code
    R-PBGA-B69
  • Memory Width
    16
  • Package Code
    LFBGA
  • Package Shape
    RECTANGULAR
  • Package Style
    GRID ARRAY, LOW PROFILE, FINE PITCH Meter
  • Surface Mount
    YES
  • Terminal Form
    BALL
  • J-STD-609 Code
    e0
  • Memory IC Type
    PSEUDO STATIC RAM
  • Operating Mode
    ASYNCHRONOUS
  • Parallel/Serial
    PARALLEL
  • Terminal Finish
    Tin/Lead (Sn/Pb)
  • DLA Qualification
    Not Qualified
  • Temperature Grade
    OTHER
  • Terminal Position
    BOTTOM
  • Memory Organization
    8MX16
  • Number of Functions
    1
  • Number of Terminals
    69
  • Terminal Pitch (mm)
    0.8
  • Access Time-Max (ns)
    75
  • Number of Words Code
    8M
  • Memory Density (bits)
    134217728
  • Package Body Material
    PLASTIC/EPOXY
  • Output Characteristics
    3-STATE
  • Seated Height-Max (mm)
    1.4
  • Supply Voltage-Max (V)
    3.3
  • Supply Voltage-Min (V)
    2.6
  • Supply Voltage-Nom (V)
    2.75
  • Number of Words (words)
    8388608
  • Standby Current-Max (A)
    3.0E-6
  • Supply Current-Max (mA)
    55
  • Package Equivalence Code
    BGA69,10X12,32
  • Operating Temperature-Max (Cel)
    85
  • Operating Temperature-Min (Cel)
    -25

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TC51WKM716AXBN75