Toshiba Corporation TC5118325BJ-60 | 搜芯易Sourcengine

Toshiba Corporation TC5118325BJ-60

生命周期状态
Discontinued
说明
EDO DRAM, 512KX32, 60ns, CMOS, PDSO70
类别
Semiconductors Memory ICs DRAMs EDO DRAM

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.02
SB Code
8542.32.00.15

Width
10.16 mm
Length
28.57 mm
Technology
CMOS
Access Mode
FAST PAGE WITH EDO
JESD-30 Code
R-PDSO-J70
Memory Width
32
Organization
512KX32
Package Code
SOJ
JESD-609 Code
e0
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
J BEND
Memory Density
16777216 bit
Memory IC Type
EDO DRAM
Operating Mode
ASYNCHRONOUS
Refresh Cycles
1024
Terminal Pitch
0.8 mm
Access Time-Max
60 ns
Number of Ports
1
Number of Words
524288 words
Terminal Finish
Tin/Lead (Sn/Pb)
Seated Height-Max
3.7 mm
Temperature Grade
COMMERCIAL
Terminal Position
DUAL
Additional Feature
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
Number of Functions
1
Number of Terminals
70
Number of Words Code
512K
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Output Characteristics
3-STATE
Operating Temperature-Max
70 Cel
Operating Temperature-Min
0 Cel
Supply Voltage-Max (Vsup)
5.5 V
Supply Voltage-Min (Vsup)
4.5 V
Supply Voltage-Nom (Vsup)
5 V