Toshiba Corporation TC5116100BVK-50 | 搜芯易Sourcengine

Toshiba Corporation TC5116100BVK-50

生命周期状态
Discontinued
说明
Fast Page DRAM, 16MX1, 50ns, CMOS
类别
Semiconductors Memory ICs DRAMs FAST PAGE DRAM

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.02
SB Code
8542.32.00.15

Technology
CMOS
Access Mode
FAST PAGE
Memory Width
1
Memory IC Type
FAST PAGE DRAM
Operating Mode
ASYNCHRONOUS
Number of Ports
1
DLA Qualification
Not Qualified
Memory Organization
16MX1
Number of Functions
1
Access Time-Max (ns)
50
Number of Words Code
16M
Memory Density (bits)
16777216
Supply Voltage-Max (V)
5.5
Supply Voltage-Min (V)
4.5
Supply Voltage-Nom (V)
5
Number of Words (words)
16777216