TBL031N06T-5DL8
CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD
- 生命周期状态Active
- RoHS符合RoHS标准
- 说明Power Field-Effect Transistor, 125A I(D), 60V, 0.0044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-PDSO-F8
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormFLAT
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- J-STD-609 Codee3
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- Terminal FinishMatte Tin (Sn)
- Terminal PositionDUAL
- Number of Elements1
- Number of Terminals8
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Power Dissipation-Max (W)138
- Drain Current-Max (ID) (A)125
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)60
- Feedback Cap-Max (Crss) (pF)50
- Operating Temperature-Max (Cel)150
- Operating Temperature-Min (Cel)-55
- Avalanche Energy Rating (Eas) (mJ)110
- Pulsed Drain Current-Max (IDM) (A)665
- Drain-source On Resistance-Max (ohm)0.0044
- Screening Level / Reference StandardAEC-Q101; MIL-STD-202
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