Toshiba Corporation TBC859-C(T5R,F,T) | 搜芯易Sourcengine

Toshiba Corporation TBC859-C(T5R,F,T)

生命周期状态
Active-Unconfirmed
RoHS
符合RoHS标准
说明
Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon
类别
Semiconductors Transistors Small Signal Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PDSO-G3
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
Terminal Position
DUAL
Additional Feature
LOW NOISE
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
PNP
Transistor Application
AMPLIFIER
DC Current Gain-Min (hFE)
420
Operating Temperature-Max
125 Cel
Collector Current-Max (IC)
0.1 A
Power Dissipation-Max (Abs)
0.15 W
Transistor Element Material
SILICON
Collector-emitter Voltage-Max
30 V
Transition Frequency-Nom (fT)
300 MHz