Renesas Technology Corp. TBB1012MMTL-E | 搜芯易Sourcengine

Renesas Technology Corp. TBB1012MMTL-E

生命周期状态
Active
RoHS
符合RoHS标准
说明
Trans RF MOSFET N-CH 6V 0.03A 6-Pin CMPAK T/R
类别
Semiconductors Transistors RF Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
AMPLIFIER
JESD-30 Code
R-PDSO-G6
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code
e6
Operating Mode
DUAL GATE, DEPLETION MODE
Terminal Finish
TIN BISMUTH
DLA Qualification
Not Qualified
Terminal Position
DUAL
Additional Feature
LOW NOISE
Number of Elements
1
Number of Terminals
6
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Highest Frequency Band
ULTRA HIGH FREQUENCY BAND
Power Gain-Min (Gp) (dB)
15
Power Dissipation-Max (W)
0.25
Drain Current-Max (ID) (A)
0.03
Moisture Sensitivity Level
1
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
6
Feedback Cap-Max (Crss) (pF)
1.5
Operating Temperature-Max (Cel)
150