Toshiba Corporation TA4100F | 搜芯易Sourcengine

Toshiba Corporation TA4100F

生命周期状态
Discontinued
说明
RF Small Signal Bipolar Transistor, 0.015A I(C), 3-Element, Ultra High Frequency Band, Silicon, NPN
类别
Semiconductors Transistors RF Small Signal Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.21.00.75
SB Code
8541.21.00.80

JESD-30 Code
R-PDSO-G6
Configuration
COMPLEX
JESD-609 Code
e0
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
Terminal Finish
TIN LEAD
Terminal Position
DUAL
Number of Elements
3
Number of Terminals
6
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
NPN
Highest Frequency Band
ULTRA HIGH FREQUENCY BAND
Transistor Application
AMPLIFIER
DC Current Gain-Min (hFE)
50
Collector Current-Max (IC)
0.015 A
Transistor Element Material
SILICON
Collector-emitter Voltage-Max
5 V
Power Dissipation Ambient-Max
0.3 W
Transition Frequency-Nom (fT)
5000 MHz