SHINDENGEN ELECTRIC MANUFACTURING CO., LTD. T3W80HFX | 搜芯易Sourcengine

SHINDENGEN ELECTRIC MANUFACTURING CO., LTD. T3W80HFX

生命周期状态
Discontinued
说明
Power Bipolar Transistor, 3A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin
类别
Semiconductors Transistors Power Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.95
SB Code
8541.29.00.80

VCEsat-Max
1 V
JESD-30 Code
R-PSFM-T3
Configuration
SINGLE
JESD-609 Code
e0
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
Case Connection
COLLECTOR
Terminal Finish
TIN LEAD
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
NPN
Transistor Application
SWITCHING
Turn-on Time-Max (ton)
500 ns
Turn-off Time-Max (toff)
3800 ns
DC Current Gain-Min (hFE)
8
Operating Temperature-Max
150 Cel
Collector Current-Max (IC)
3 A
Moisture Sensitivity Level
2
Power Dissipation-Max (Abs)
80 W
Transistor Element Material
SILICON
Collector-emitter Voltage-Max
800 V
Peak Reflow Temperature (Cel)
240
Power Dissipation Ambient-Max
80 W
Transition Frequency-Nom (fT)
8 MHz