Qorvo, Inc T1G4020036-FS | 搜芯易Sourcengine

Qorvo, Inc T1G4020036-FS

生命周期状态
Active
RoHS
符合RoHS标准
REACH
REACH compliant
说明
RF JFET Transistors DC-3.5GHz GaN 2X 120W 36Volt
类别
Semiconductors Transistors RF Power Field-Effect Transistors

ECCN
3A001.B.3.A.3
ECCN Governance
EAR

Application
AMPLIFIER
JESD-30 Code
R-CDFP-F4
Configuration
SEPARATE, 2 ELEMENTS
Package Shape
RECTANGULAR
Package Style
FLATPACK Meter
Surface Mount
YES
Terminal Form
FLAT
FET Technology
HIGH ELECTRON MOBILITY
Operating Mode
DEPLETION MODE
Case Connection
SOURCE
Terminal Position
DUAL
Number of Elements
2
Number of Terminals
4
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Polarity/Channel Type
N-CHANNEL
Highest Frequency Band
S BAND
Drain Current-Max (ID) (A)
24
Moisture Sensitivity Level
3
Transistor Element Material
GALLIUM NITRIDE
Peak Reflow Temperature (Cel)
260