IXYS Corporation T1290BF65A | 搜芯易Sourcengine

IXYS Corporation T1290BF65A

生命周期状态
Transferred
说明
Insulated Gate Bipolar Transistor, 1290A I(C), 6500V V(BR)CES, N-Channel
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
O-CEDB-X3
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
ROUND
Package Style
DISK BUTTON Meter
Surface Mount
YES
Terminal Form
UNSPECIFIED
VCEsat-Max (V)
4
Terminal Position
END
Number of Elements
1
Number of Terminals
3
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
15200
Transistor Element Material
SILICON
Turn-on Time-Nom (ton) (ns)
4700
Gate-emitter Voltage-Max (V)
20
Turn-off Time-Nom (toff) (ns)
6400
Collector Current-Max (IC) (A)
1290
Operating Temperature-Max (Cel)
125
Operating Temperature-Min (Cel)
-40
Collector-emitter Voltage-Max (V)
6500