IXYS Corporation T1000EC33G | 搜芯易Sourcengine

IXYS Corporation T1000EC33G

生命周期状态
Transferred
说明
Insulated Gate Bipolar Transistor, 1000A I(C), 3300V V(BR)CES, N-Channel
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
O-CEDB-X3
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
DISK BUTTON Meter
Surface Mount
YES
Terminal Form
UNSPECIFIED
VCEsat-Max (V)
2.97
Terminal Position
END
Number of Elements
1
Number of Terminals
3
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
6400
Transistor Element Material
SILICON
Turn-on Time-Nom (ton) (ns)
3500
Gate-emitter Voltage-Max (V)
20
Turn-off Time-Nom (toff) (ns)
6800
Collector Current-Max (IC) (A)
1000
Operating Temperature-Max (Cel)
125
Operating Temperature-Min (Cel)
-40
Collector-emitter Voltage-Max (V)
3300