IXYS Corporation T0900EA45A | 搜芯易Sourcengine

IXYS Corporation T0900EA45A

生命周期状态
Transferred
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Insulated Gate Bipolar Transistor, 1212A I(C), 4500V V(BR)CES, N-Channel
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
O-CEDB-N3
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
ROUND
Package Style
DISK BUTTON Meter
Surface Mount
YES
Terminal Form
NO LEAD
DLA Qualification
Not Qualified
Terminal Position
END
Number of Elements
1
Number of Terminals
3
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Polarity/Channel Type
N-CHANNEL
Transistor Element Material
SILICON
Turn-on Time-Nom (ton) (ns)
3900
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Turn-off Time-Nom (toff) (ns)
2400
Collector Current-Max (IC) (A)
1212
Operating Temperature-Max (Cel)
125
Collector-emitter Voltage-Max (V)
4500
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED