IXYS Corporation T0900AF65E | 搜芯易Sourcengine

IXYS Corporation T0900AF65E

生命周期状态
Transferred
说明
Insulated Gate Bipolar Transistor, 900A I(C), 6500V V(BR)CES, N-Channel
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
O-CEDB-X3
Configuration
SINGLE
Package Shape
ROUND
Package Style
DISK BUTTON Meter
Surface Mount
YES
Terminal Form
UNSPECIFIED
VCEsat-Max (V)
5.2
Terminal Position
END
Number of Elements
1
Number of Terminals
3
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
10600
Transistor Element Material
SILICON
Turn-on Time-Nom (ton) (ns)
4600
Gate-emitter Voltage-Max (V)
20
Turn-off Time-Nom (toff) (ns)
6600
Collector Current-Max (IC) (A)
900
Operating Temperature-Max (Cel)
125
Operating Temperature-Min (Cel)
-40
Collector-emitter Voltage-Max (V)
6500