IXYS Corporation T-IXFD110N20 | 搜芯易Sourcengine

IXYS Corporation T-IXFD110N20

生命周期状态
Discontinued
说明
Power Field-Effect Transistor, 200V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-XUUC-N4
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
UNCASED CHIP Meter
Surface Mount
YES
Terminal Form
NO LEAD
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Terminal Position
UPPER
Number of Elements
1
Number of Terminals
4
Qualification Status
Not Qualified
Package Body Material
UNSPECIFIED
Polarity/Channel Type
N-CHANNEL
DS Breakdown Voltage-Min
200 V
Transistor Element Material
SILICON
Drain-source On Resistance-Max
0.02 ohm