ONSEMI SVHL080N120SC1 | 搜芯易Sourcengine

ONSEMI SVHL080N120SC1

生命周期状态
Active
RoHS
符合RoHS标准
说明
Power Field-Effect Transistor, 44A I(D), 1200V, 0.11ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PSFM-T3
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-247
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
FET Technology
METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code
e3
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Finish
Matte Tin (Sn) - annealed
Terminal Position
SINGLE
Additional Feature
HIGH RELIABILITY
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
348
Drain Current-Max (ID) (A)
44
Transistor Element Material
SILICON CARBIDE
Turn-on Time-Max (ton) (ns)
25
DS Breakdown Voltage-Min (V)
1200
Feedback Cap-Max (Crss) (pF)
10
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Turn-off Time-Max (toff) (ns)
61
Operating Temperature-Max (Cel)
175
Operating Temperature-Min (Cel)
-55
Avalanche Energy Rating (Eas) (mJ)
171
Pulsed Drain Current-Max (IDM) (A)
136
Drain-source On Resistance-Max (ohm)
0.11
Screening Level / Reference Standard
AEC-Q101
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED