Vishay Intertechnology, Inc. SUR50N024-06P-E3 | 搜芯易Sourcengine

Vishay Intertechnology, Inc. SUR50N024-06P-E3

生命周期状态
Discontinued
RoHS
符合RoHS标准
说明
Power Field-Effect Transistor, 80A I(D), 22V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PSSO-G3
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-252
JESD-609 Code
e3
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Finish
Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
80 A
Transistor Application
SWITCHING
DS Breakdown Voltage-Min
22 V
Operating Temperature-Max
175 Cel
Moisture Sensitivity Level
1
Power Dissipation-Max (Abs)
6.8 W
Transistor Element Material
SILICON
Avalanche Energy Rating (Eas)
101 mJ
Drain-source On Resistance-Max
0.0095 ohm
Pulsed Drain Current-Max (IDM)
100 A