Vishay Intertechnology, Inc. SUD19P06-60L-T4-E3 | 搜芯易Sourcengine

Vishay Intertechnology, Inc. SUD19P06-60L-T4-E3

生命周期状态
NRFND
说明
Power Field-Effect Transistor, 19A I(D), 60V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PSSO-G2
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-252
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
2
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
P-CHANNEL
Drain Current-Max (ID) (A)
19
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
60
Avalanche Energy Rating (Eas) (mJ)
24.2
Pulsed Drain Current-Max (IDM) (A)
30
Drain-source On Resistance-Max (ohm)
0.06