Toshiba Corporation ST2000GXH31 | 搜芯易Sourcengine

Toshiba Corporation ST2000GXH31

生命周期状态
Active
说明
Insulated Gate Bipolar Transistor, 2000A I(C), 4500V V(BR)CES, N-Channel
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
MOTOR CONTROL
JESD-30 Code
O-XXDB-X4
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
ROUND
Package Style
DISK BUTTON Meter
Surface Mount
NO
Terminal Form
UNSPECIFIED
VCEsat-Max (V)
3.2
Terminal Position
UNSPECIFIED
Additional Feature
HIGH RELIABILITY
Number of Elements
1
Number of Terminals
4
Package Body Material
UNSPECIFIED
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
12500
Transistor Element Material
SILICON
Turn-on Time-Nom (ton) (ns)
1400
Gate-emitter Voltage-Max (V)
20
Turn-off Time-Nom (toff) (ns)
13000
Collector Current-Max (IC) (A)
2000
Operating Temperature-Max (Cel)
125
Operating Temperature-Min (Cel)
-40
Collector-emitter Voltage-Max (V)
4500