SeCoS Corporation SSPR100N04S-C | 搜芯易Sourcengine

SeCoS Corporation SSPR100N04S-C

生命周期状态
Active
说明
Power Field-Effect Transistor, 85A I(D), 40V, 0.004ohm, 1-Element, N-Channel, Silicon, Split Gate Trench Mosfet FET
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PDSO-F8
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
FLAT
FET Technology
SPLIT GATE TRENCH MOSFET
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
8
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
41.7
Drain Current-Max (ID) (A)
85
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
40
Feedback Cap-Max (Crss) (pF)
81
Operating Temperature-Max (Cel)
150
Operating Temperature-Min (Cel)
-55
Pulsed Drain Current-Max (IDM) (A)
200
Drain-source On Resistance-Max (ohm)
0.004