SeCoS Corporation SSP7492N-C | 搜芯易Sourcengine

SeCoS Corporation SSP7492N-C

生命周期状态
Contact Mfr
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Power Field-Effect Transistor, 6.2A I(D), 150V, 0.088ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PDSO-F5
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
FLAT
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
5
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
6.2 A
Transistor Application
SWITCHING
DS Breakdown Voltage-Min
150 V
Operating Temperature-Max
150 Cel
Power Dissipation-Max (Abs)
5 W
Transistor Element Material
SILICON
Drain-source On Resistance-Max
0.088 ohm
Pulsed Drain Current-Max (IDM)
30 A