SILICON STANDARD CORP SSM9975GM | 搜芯易Sourcengine

SILICON STANDARD CORP SSM9975GM

生命周期状态
Contact Mfr
RoHS
符合RoHS标准
说明
Power Field-Effect Transistor, 7.6A I(D), 60V, 0.021ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.95
SB Code
8541.29.00.80

JESD-30 Code
R-PDSO-G8
Configuration
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Terminal Position
DUAL
Number of Elements
2
Number of Terminals
8
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
7.6 A
Transistor Application
SWITCHING
Feedback Cap-Max (Crss)
170 pF
DS Breakdown Voltage-Min
60 V
Operating Temperature-Max
150 Cel
Operating Temperature-Min
-55 Cel
Moisture Sensitivity Level
3
Power Dissipation-Max (Abs)
2 W
Transistor Element Material
SILICON
Power Dissipation Ambient-Max
2 W
Drain-source On Resistance-Max
0.021 ohm
Pulsed Drain Current-Max (IDM)
30 A