SSM6N7002BFE(TPL3,F)
Toshiba Corporation
- 生命周期状态Active
- RoHS符合RoHS标准
- 说明Power Field-Effect Transistor, 0.2A I(D), N-Channel, Metal-oxide Semiconductor FET
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- Surface MountYES
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Polarity/Channel TypeN-CHANNEL
- Power Dissipation-Max (W)0.15
- Drain Current-Max (ID) (A)0.2
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Operating Temperature-Max (Cel)150
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
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SSM6N7002BFE(TPL3,F)
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SSM6N7002BFE(TPL3,F)