Toshiba Corporation SSM6N67NU | 搜芯易Sourcengine

Toshiba Corporation SSM6N67NU

生命周期状态
Active
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Power Field-Effect Transistor, 4A I(D), 30V, 0.0391ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
S-PDSO-N6
Configuration
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Package Shape
SQUARE
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
NO LEAD
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Position
DUAL
Number of Elements
2
Number of Terminals
6
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
1
Drain Current-Max (ID) (A)
4
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
30
Feedback Cap-Max (Crss) (pF)
20
Peak Reflow Temperature (Cel)
260
Operating Temperature-Max (Cel)
150
Pulsed Drain Current-Max (IDM) (A)
10
Drain-source On Resistance-Max (ohm)
0.0391
Screening Level / Reference Standard
AEC-Q101
Time@Peak Reflow Temperature-Max (s)
30