Toshiba Corporation SSM6N35FE,LM(T | 搜芯易Sourcengine

Toshiba Corporation SSM6N35FE,LM(T

生命周期状态
Active
RoHS
符合RoHS标准
说明
Small Signal Field-Effect Transistor, 0.18A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
类别
Semiconductors Transistors Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PDSO-F6
Configuration
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
FLAT
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Terminal Position
DUAL
Number of Elements
2
Number of Terminals
6
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
0.15
Drain Current-Max (ID) (A)
0.18
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
20
Feedback Cap-Max (Crss) (pF)
4.1
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Operating Temperature-Max (Cel)
150
Drain-source On Resistance-Max (ohm)
4
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED