Toshiba Corporation SSM6L09FUTE85LF | 搜芯易Sourcengine

Toshiba Corporation SSM6L09FUTE85LF

生命周期状态
NRFND
RoHS
符合RoHS标准
说明
Trans MOSFET N/P-CH Si 30V 0.4A/0.2A 6-Pin US T/R
类别
Semiconductors Transistors Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PDSO-G6
Configuration
N and P-Channel
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Terminal Position
DUAL
Number of Elements
2
Number of Terminals
6
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL AND P-CHANNEL
Power Dissipation-Max (W)
0.3
Drain Current-Max (ID) (A)
0.4
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
30
Feedback Cap-Max (Crss) (pF)
7
Operating Temperature-Max (Cel)
150
Drain-source On Resistance-Max (ohm)
1.7