Toshiba Corporation SSM6K810R,LXHF | 搜芯易Sourcengine

Toshiba Corporation SSM6K810R,LXHF

生命周期状态
Active
RoHS
符合RoHS标准
说明
AUTO AEC-Q SS MOS N-CH LOGIC-LEV
类别
Semiconductors Transistors Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PDSO-F6
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
FLAT
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
6
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
1.5
Drain Current-Max (ID) (A)
3.5
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
100
Feedback Cap-Max (Crss) (pF)
22
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Operating Temperature-Max (Cel)
175
Avalanche Energy Rating (Eas) (mJ)
21.4
Pulsed Drain Current-Max (IDM) (A)
14
Drain-source On Resistance-Max (ohm)
0.069
Screening Level / Reference Standard
AEC-Q101
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED