Toshiba Corporation SSM3K106TU(T5L,T) | 搜芯易Sourcengine

Toshiba Corporation SSM3K106TU(T5L,T)

生命周期状态
Discontinued
RoHS
符合RoHS标准
说明
Power Field-Effect Transistor
类别
Semiconductors Transistors Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PDSO-F3
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
FLAT
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
0.8
Drain Current-Max (ID) (A)
1.2
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
20
Feedback Cap-Max (Crss) (pF)
10
Operating Temperature-Max (Cel)
150
Drain-source On Resistance-Max (ohm)
0.53