Toshiba Corporation SSM3J356R,LF(B | 搜芯易Sourcengine

Toshiba Corporation SSM3J356R,LF(B

生命周期状态
Active
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Trans MOSFET P-CH 60V 2A 3-Pin SOT-23F
类别
Semiconductors Transistors Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PDSO-F3
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
FLAT
FET Technology
METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code
e3
Operating Mode
ENHANCEMENT MODE
Terminal Finish
Tin (Sn)
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
P-CHANNEL
Power Dissipation-Max (W)
1
Drain Current-Max (ID) (A)
2
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
60
Feedback Cap-Max (Crss) (pF)
25
Operating Temperature-Max (Cel)
150
Pulsed Drain Current-Max (IDM) (A)
6
Drain-source On Resistance-Max (ohm)
0.4