SSM3J108TU,LF(T
Toshiba Corporation
- 生命周期状态Discontinued
- 说明Small Signal Field-Effect Transistor, 1.8A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-PDSO-F3
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormFLAT
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Terminal PositionDUAL
- Number of Elements1
- Number of Terminals3
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeP-CHANNEL
- Drain Current-Max (ID)1.8 A
- Transistor ApplicationSWITCHING
- DS Breakdown Voltage-Min20 V
- Transistor Element MaterialSILICON
- Drain-source On Resistance-Max0.158 ohm
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SSM3J108TU,LF(T