Samsung Semiconductor, Inc. SSI4N60A | 搜芯易Sourcengine

Samsung Semiconductor, Inc. SSI4N60A

生命周期状态
Transferred
说明
Power Field-Effect Transistor, 4A I(D), 600V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PSIP-T3
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
IN-LINE Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
DLA Qualification
Not Qualified
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
100
Drain Current-Max (ID) (A)
4
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
600
Operating Temperature-Max (Cel)
150
Avalanche Energy Rating (Eas) (mJ)
262
Pulsed Drain Current-Max (IDM) (A)
16
Drain-source On Resistance-Max (ohm)
2.5